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AM29F200 bảng dữ liệu(PDF) 35 Page - Advanced Micro Devices |
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AM29F200 bảng dữ liệu(HTML) 35 Page - Advanced Micro Devices |
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35 / 39 page ![]() Am29F200B 35 ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25×C, 5.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 4.5 V (VCC = 4.75 V for ±5% devices), 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Note: Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time. TSOP AND SO PIN CAPACITANCE Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Limits Comments Typ (Note 1) Max (Note 2) Unit Sector Erase Time 1 8 sec Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 5 sec Byte Programming Time 7 300 µs Excludes system-level overhead (Note 5) Word Programming Time 12 500 µs Chip Programming Time (Note 3) 1.8 5.4 sec Parameter Description Min Max Input Voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V VCC Current –100 mA +100 mA Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 8 10 pF Parameter Test Conditions Min Unit Minimum Pattern Data Retention Time 150 °C 10 Years 125 °C 20 Years |
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