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IPD65R660CFDA bảng dữ liệu(PDF) 6 Page - Infineon Technologies AG

tên linh kiện IPD65R660CFDA
Giải thích chi tiết về linh kiện  Metal Oxide Semiconductor Field Effect Transistor
PDF  14 Pages
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nhà sản xuất  INFINEON [Infineon Technologies AG]
Trang chủ  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD65R660CFDA bảng dữ liệu(HTML) 6 Page - Infineon Technologies AG

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6
650VCoolMOS™CFDAPowerTransistor
IPD65R660CFDA
Rev.2.1,2014-11-19
Final Data Sheet
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
1)
V(BR)DSS
650
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
3.5
4
4.5
V
VDS=VGS,ID=0.21455mA
Zero gate voltage drain current
IDSS
1
µA
VDS=650V,VGS=0V,Tj=25°C
100
VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current
IGSS
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
0.594
0.66
Ω
VGS=10V,ID=3.21825A,Tj=25°C
1.5444
VGS=10V,ID=3.21825A,
Tj=150°C
Gate resistance
RG
6.5
Ω
f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
543
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
32
pF
Effective output capacitance, energy
related
2)
Co(er)
24
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related
3)
Co(tr)
97
pF
ID=constant,VGS=0V,
VDS=0...400V
Turn-on delay time
td(on)
9
ns
VDD=400V,VGS=13V,
ID=3.21825A,RG=6.8
Ω
(see table 9)
Rise time
tr
8
ns
Turn-off delay time
td(off)
40
ns
Fall time
tf
10
ns
Table6Gatechargecharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
3.5
nC
VDD=480V,ID=3.2A,
VGS=0to10V
Gate to drain charge
Qgd
11
nC
Gate charge total
Qg
20
nC
Gate plateau voltage
Vplateau
6.4
V
1) For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to evaluate
the impact of the cosmic radiation effect in early design phase. For assessment please contact local Infineon sales
office.
2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V
3) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V



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