IPD65R660CFDA datasheet(4/14 Pages) INFINEON

tên linh kiện	IPD65R660CFDA

Giải thích chi tiết về linh kiện	Metal Oxide Semiconductor Field Effect Transistor

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650VCoolMOS™CFDAPowerTransistor

IPD65R660CFDA

Rev.2.1,2014-11-19

Final Data Sheet

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

TC=25°C

3.8

TC=100°C

Pulsed drain current

ID‚pulse

TC=25°C

Avalanche energy, single pulse

EAS

115

ID=1.2A,VDD=50V

(see table 10)

Avalanche energy, repetitive

EAR

0.21

ID=1.2A,VDD=50V

Avalanche current, repetitive

IAR

1.2

MOSFET dv/dt ruggedness

dv/dt

V/ns

VDS=0...400V

Gate source voltage

VGS

-20

static

-30

AC (f > 1 Hz)

Power dissipation (SMD)

DPAK

Ptot

62.5

TC=25°C

Operating and storage temperature

Tj‚Tstg

-40

150

°C

Continuous diode forward current

6.035057

TC=25°C

Diode pulse current

IS‚pulse

TC=25°C

Reverse diode dv/dt

dv/dt

V/ns

VDS=0...400V,ISD

≤ID,

Tj=25°C

(see table 8)

Maximum diode commutation speed

dif/dt

900

A/µs

1) Limited by Tj max.

2) Pulse width tp limited by Tj max

3) Identical low side and high side switch with identical RG

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