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SST12LP17E bảng dữ liệu(PDF) 1 Page - Microchip Technology |
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SST12LP17E bảng dữ liệu(HTML) 1 Page - Microchip Technology |
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1 / 15 page ![]() ©2014 Silicon Storage Technology, Inc. DS-70005004G 10/14 Data Sheet www.microchip.com Features • Input/Output ports internally matched to 50 and DC decoupled • High gain: – Typically 28 dB gain across 2.4–2.5 GHz • High linear output power: – >24 dBm P1dB - Single-tone measurement. Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM ACPR requirement up to 21.5 dBm – 3% EVM up to 18 dBm for 54 Mbps 802.11g signal – 2.5% EVM up to 17 dBm for 802.11n, MCS7, 40 MHz – Meets 802.11b ACPR requirement up to 22.5 dBm – Meets Bluetooth® spectrum mask for 3 Mbps at 17 dBm typical • High power-added efficiency/Low operating cur- rent for 802.11b/g/n applications – ~28%/138 mA @ POUT = 21.5 dBm for 802.11g – ~33%/155 mA @ POUT = 22.5 dBm for 802.11b • Single-pin low IREF power-up/down control –IREF <2 mA • Low idle current – ~60 mA ICQ • High-speed power-up/down – Turn on/off time (10%- 90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • Low shut-down current (~2 µA) • Stable performance over temperature – ~2 dB gain variation between -40°C to +85°C – ~1 dB power variation between -40°C to +85°C • Excellent on-chip power detection – >15 dB dynamic range, dB-wise linear – VSWR insensitive, temperature stable • Packages available – 8-contact X2SON – 2mm x 2mm x 0.4mm – 8-contact USON – 2mm x 2mm x 0.6mm • Non-Pb (lead-free), RoHS compliant, and Halogen free Applications • WLAN (IEEE 802.11b/g/n) • Bluetooth® • Cordless phones • 2.4 GHz ISM wireless equipment 2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP17E SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli- ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28% power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing 3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm. This power amplifier requires no external RF matching, and only requires one exter- nal DC-bias capacitor to meet the specified performance. It offers high-speed power-up/-down control through a single reference voltage pin and includes a tem- perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con- tact USON package. |
Số phần tương tự - SST12LP17E |
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Mô tả tương tự - SST12LP17E |
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