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SST12LP17E bảng dữ liệu(PDF) 6 Page - Microchip Technology

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Giải thích chi tiết về linh kiện  2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
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SST12LP17E bảng dữ liệu(HTML) 6 Page - Microchip Technology

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©2014 Silicon Storage Technology, Inc.
DS-70005004G
10/14
6
2.4 GHz High-Efficiency, High-Gain Power Amplifier Module
SST12LP17E
Data Sheet
Table 4: RF Characteristics at 25°C
Symbol
Parameter
Min.
Typ
Max.
Unit
FL-U
Frequency range
2412
2484
MHz
G
Small signal gain
27
28
dB
GVAR1
Gain variation over band (2412–2484 MHz)
±0.5
dB
GVAR2
Gain ripple over channel (20 MHz)
0.2
dB
2f, 3f, 4f, 5f
Harmonics at 23 dBm, without external filters
-40
dBc
EVM
EVM @ 18 dBm output with 802.11g OFDM 54 Mbps
signal
3%
EVM @ 17 dBm output with MCS7-40 MHz band-
width
2.5
%
POUT
Output Power to meet 802.11g OFDM 54 Mbps
spectrum mask
20.5
21.5
dBm
Output Power to meet 802.11b DSSS 1 Mbps
spectrum mask
21
22.5
dBm
T4.2 75004
Table 5: Characteristics at 25°C for Bluetooth Applications
Symbol
Parameter
Min.
Typ
Max.
Unit
FL-U
Frequency range
2412
2484
MHz
G
Small signal gain (configured as shown in Figure 9
on page 10)
26
28
dB
Small signal gain (VREF = 3.0V with 1.5kΩ series
resistor)
23
26
dB
ICC
DC current at 17 dBm CW (configured as shown in
Figure 9 on page 10)
100
mA
DC current at 12 dBm CS (VREF = 3.0V with 1.5kΩ
series resistor)
50
mA
Power
Meeting Bluetooth spectrum power density using 3
Mbps modulation (-20 dBm at 1.5 MHz and -40 dBm
at 2.5 MHz, 100 kHz RBW)
(configured as shown in Figure 9 on page 10)
17
dBm
Meeting Bluetooth spectrum power density using 3
Mbps modulation (-20 dBm at 1.5 MHz and -40 dBm
at 2.5 MHz, 100 kHz RBW)
(VREF = 3.0V with 1.5kΩ series resistor)
12
dBm
T5.2 75004



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