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TMS417400-60DR bảng dữ liệu(PDF) 4 Page - Texas Instruments |
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TMS417400-60DR bảng dữ liệu(HTML) 4 Page - Texas Instruments |
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4 / 30 page ![]() TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881B – MAY 1995 – REVISED AUGUST 1995 4 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 test mode The test mode is initiated with a CBR-refresh cycle while simultaneously holding the W input low. The entry cycle performs an internal refresh cycle while internally setting the device to perform parallel read or write on subsequent cycles. While in the test mode, any data sequence can be performed. The device exits test mode if a CBR refresh cycle with W held high or a RAS-only refresh cycle is performed. In the test mode, the device is configured as 1024K bits × 4 bits for each DQ. Each DQ pin has a separate 4-bit parallel read and write data bus that ignores column addresses A0 and A1. During a read cycle, the four internal bits are compared for each DQ pin separately. If the four bits agree, DQ goes high; if not, DQ goes low. During a write cycle, the data states of all four DQs must be the same to ensure proper function of the test mode. Test time is reduced by a factor of four for this series. Test Mode Cycle Entry Cycle Exit Cycle Normal Mode RAS CAS W NOTE A: The states of W, data in, and address are defined by the type of cycle used during test mode. Figure 1. Test-Mode Cycle |
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