MPX2010 MPXV2010G SERIES

3

Motorola Sensor Device Data

ON–CHIP TEMPERATURE COMPENSATION and CALIBRATION

Figure 2. Output versus Pressure Differential

MIN

TYP

OFFSET

(TYP)

30

20

15

10

5

25

0

-5

kPa

PSI

2.5

0.362

5

0.725

7.5

1.09

10

1.45

SPAN

RANGE

(TYP)

P1 > P2

Figure 2 shows the output characteristics of the

MPX2010/MPXV2010G series at 25

°C. The output is direct-

ly proportional to the differential pressure and is essentially a

straight line.

The effects of temperature on full scale span and offset are

very small and are shown under Operating Characteristics.

This performance over temperature is achieved by having

both the shear stress strain gauge and the thin–film resistor

circuitry on the same silicon diaphragm. Each chip is dynam-

ically laser trimmed for precise span and offset calibration

and temperature compensation.

Figure 3. Unibody Package — Cross–Sectional

Diagram (not to scale)

SILICONE

DIE COAT

WIRE BOND

LEAD FRAME

DIE

STAINLESS STEEL

METAL COVER

EPOXY

CASE

RTV DIE

BOND

P1

P2

Figure 3 illustrates the differential/gauge die in the basic

chip carrier (Case 344). A silicone gel isolates the die surface

and wire bonds from the environment, while allowing the pres-

sure signal to be transmitted to the silicon diaphragm.

The MPX2010/MPXV2010G series pressure sensor oper-

ating characteristics and internal reliability and qualification

tests are based on use of dry air as the pressure media. Me-

dia other than dry air may have adverse effects on sensor

performance and long term reliability. Contact the factory for

information regarding media compatibility in your application.

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com