Parameter

Symbol

Condition

Min

Typ

Max

Unit

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

0.5

0.75

1.2

V

-

37

59

m

Ω

Drain-Source On-State Resistance

-

30

45

m

Ω

Forward Transconductance

-

8

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

300

-

PF

Output Capacitance

-

120

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

80

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

10

15

nS

Turn-on Rise Time

-

50

85

nS

Turn-Off Delay Time

-

17

45

nS

Turn-Off Fall Time

-

10

20

nS

Total Gate Charge

-

4.0

10

nC

Gate-Source Charge

-

0.65

-

nC

Gate-Drain Charge

-

1.2

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

0.75

1.2

V

Diode Forward Current

(Note 2)

-

-

4

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2 .

%

4. Guaranteed by design, not subject to production

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

20

22

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

MORE Semiconductor Company Limited

http://www.moresemi.com

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