MSN2300B datasheet(1/6 Pages) MORESEMI

tên linh kiện	MSN2300B

Giải thích chi tiết về linh kiện	20V(D-S) N-Channel Enhancement Mode Power MOS FET

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General Features

● VDS = 20V,ID =3A

RDS(ON) < 59mΩ @ VGS=2.5V

RDS(ON) < 45mΩ @ VGS=4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Application

● Battery protection

● Load switch

● Power management

D

G

S

Schematic diagram

1

3

2

G

D

S

Marking and pin assignment

SOT-23 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN2300B

SOT-23

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±10

V

Drain Current-Continuous

ID

3

A

Drain Current-Pulsed

(Note 1)

IDM

10

A

Maximum Power Dissipation

PD

1

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient

(Note 2)

RθJA

125

/W

℃

MSN2300B

20V(D-S) N-Channel Enhancement Mode Power MOS FET

Lead Free

PIN Configuration

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http://www.moresemi.com

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Số phần tương tự - MSN2300B

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
MORE Semiconductor Comp...	MSN2300	355Kb / 6P	20V(D-S) N-Channel Enhancement Mode Power MOS FET
MORE Semiconductor Comp...	MSN2300A	382Kb / 6P	20V(D-S) N-Channel Enhancement Mode Power MOS FET

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Mô tả tương tự - MSN2300B

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	MSN2300	355Kb / 6P	20V(D-S) N-Channel Enhancement Mode Power MOS FET
	MSN2300A	382Kb / 6P	20V(D-S) N-Channel Enhancement Mode Power MOS FET
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Số phần tương tự - MSN2300B

Mô tả tương tự - MSN2300B

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