UCD3138ARMHT datasheet(14/87 Pages) TI1

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UCD3138A

SLUSC66C – MARCH 2015 – REVISED SEPTEMBER 2016

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Specifications

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Referenced to DGND

Specifications

5.1

Absolute Maximum Ratings

(1)

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Input voltage

V33D to DGND

–0.3

3.8

V33DIO to DGND

–0.3

3.8

V33A to AGND

–0.3

3.8

BP18 to DGND

–0.3

2.5

Ground difference, |DGND – AGND|

0.3

Applied to all pins, excluding AGND (2)

–0.3

3.8

Junction temperature, TJ

–40

150

°C

Storage temperature, Tstg

–55

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.2

ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

5.3

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VV33D

Digital power

3.3

3.6

VV33DIO

Digital I/O power

3.3

3.6

VV33A

Analog power

3.3

3.6

VBP18

1.8-V digital power

1.6

1.8

Junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report,

5.4

Thermal Information

THERMAL METRIC(1)

UCD3138A

UNIT

64 PIN

40 PIN

VQFN (RGC)

WQFN (RMH)

VQFN (RJA)

RθJA

Junction-to-ambient thermal resistance

25.1

31.0

30.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

10.5

16.5

13.5

°C/W

RθJB

Junction-to-board thermal resistance

4.6

6.3

4.9

°C/W

ψJT

Junction-to-top characterization parameter

0.2

°C/W

ψJB

Junction-to-board characterization parameter

4.6

6.3

4.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

1.2

1.1

0.7

°C/W

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