ADS8342

SBAS277 – MAY 2003

www.ti.com

5

ELECTRICAL CHARACTERISTICS (continued)

Over recommended operating free-air temperature range at –40

°C to +85°C, ±AVDD =±DVDD =±5V, BVDD = +5V, VREF = +2.5V, fCLK = 5MHz, and

fSAMPLE = 250kSPS, unless otherwise noted.

PARAMETER

UNIT

ADS8342IB

ADS8342I

TEST CONDITIONS

PARAMETER

UNIT

MAX

TYP(1)

MIN

MAX

TYP(1)

MIN

TEST CONDITIONS

Voltage Reference Input

Reference voltage

2.0

2.5

2.55

:

:

:

V

Reference input resistance

100

:

M

Ω

Reference input capacitance

5

:

pF

Reference input current

25

:

nA

5V Digital Inputs(3)

Logic family

CMOS

High-level input voltage (VIH)

0.7

× BVDD

BVDD + 0.3

V

Low-level input voltage (VIL)

–0.3

0.3

× BVDD

V

Input leakage current (IIN)

VI = BVDD or GND

±50

nA

Input capacitance (CI)

5

pF

5V Digital Outputs(3)

Logic family

CMOS

High-level output voltage (VOH)

IOH = –100µA

4.4

V

Low-level output voltage (VOL)

IOL = +100µA

0.5

V

High-impeadance-state output current

(IOZ)

CS = BVDD, VO = BVDD or

GND

±50

nA

Output capacitance (CO)

5

pF

Load capacitance (CL)

20

pF

Data format

Binary Two’s Complement

3V Digital Inputs(4)

Logic family

LVCMOS

High-level input voltage (VIH)

BVDD = 3.6V

2

BVDD + 0.3

V

Low-level input voltage (VIL)

BVDD = 2.7V

–0.3

0.8

V

Input leakage current (IIN)

VI = BVDD or GND

±50

nA

Input capacitance (CI)

5

pF

3V Digital Outputs(4)

Logic family

LVCMOS

High-level output voltage (VOH)

V

Low-level output voltage (VOL)

BVDD = 2.7V, IOL = +100µA

0.2

V

High-impeadance-state output current

(IOZ)

CS = BVDD, VO = BVDD or

GND

±50

nA

Output capacitance (CO)

5

pF

Load capacitance (CL)

20

pF

Data format

Binary Two’s Complement

(1) All typical values are at TA = +25°C.

(2) Ensured by design.

(3) Applies for 5.0V nominal supply: BVDD (min) = 4.5V and BVDD (max) = 5.5V.

(4) Applies for 3.0V nominal supply: BVDD (min) = 2.7V and BVDD (max) = 3.6V.