PAM8904Q

Document number: DS38977 Rev. 1 - 2

3 of 11

www.diodes.com

June 2016

© Diodes Incorporated

PAM8904Q

Symbol

Characteristics

Value

Unit

Supply Voltage

-0.3 to +5.5

V

V

Thermal Resistance (Junction to Ambient)

35

°C/W

Thermal Resistance (Junction to Case)

14

°C/W

Operating Junction Temperature Range

-40 to +150

°C

Storage Temperature Range

-65 to +150

°C

ESD Susceptibility

HBM

Human Body Model

8

kV

MM

Machine Model

600

V

CDM

Charged Device Model

1

kV

Caution:

Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings

only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not

implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.

(Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.)

Symbol

Characteristics

Min

Max

Unit

Supply Voltage

2.3

5.0

V

High-Level Input Voltage

1.2

V

Low-Level Input Voltage

-0.3

+0.4

V

Operating Free-Air Temperature

-40

+105

°C