SLMA002 datasheet(5/46 Pages) TI1

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TPS55383

,, TPS55386

www.ti.com ......................................................................................................................................................................................... SLUS818 – SEPTEMBER 2008

ELECTRICAL CHARACTERISTICS (continued)

–40°C

≤ TJ ≤ +125°C, VPVDD1 = VPVDD2 = 12 V, unless otherwise noted.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OVERCURRENT PROTECTION

ICL1

Current limit Channel 1

3.6

4.5

5.6

VILIM2 = VBP

3.6

4.5

5.6

ICL2

Current limit Channel 2

VILIM2 = (floating)

2.4

3.0

3.6

VILIM2 = GND

1.15

1.50

1.75

VUV1

Low-level output threshold to declare a fault

Measured at feedback pin.

670

730

VUV2

THICCUP

(3)

Hiccup timeout

tON1(oc)

(3)

Minimum overcurrent pulse width

150

tON2(oc)

(3)

BOOTSTRAP

RBOOT1,

From BP to BOOT1 or BP to BOOT2,

Bootstrap switch resistance

Ω

RBOOT2

IEXT = 50 mA

OUTPUT STAGE (Channel 1 and Channel 2)

TJ = +25°C, VPVDD2 = 8 V

RDS(on)

(3)

MOSFET on resistance plus bond wire resistance

Ω

–40°C < TJ < +125°C, VPVDD2 = 8 V

165

tON(min)

(3)

Minimum controllable pulse width

ISWx peak current > 1 A

(4)

100

200

DMIN

Minimum Duty Cycle

VFB = 0.9 V

TPS55383 fSW = 300 kHz

DMAX

Maximum Duty Cycle

TPS55386 fSW = 600 kHz

ISW

Switching node leakage current (sourcing)

Outputs OFF

µA

THERMAL SHUTDOWN

TSD

(3)

Shutdown temperature

148

°C

TSD(hys)

(3)

Hysteresis

(3)

Ensured by design. Not production tested.

(4)

See Figure 14 for ISWx peak current <1 A.

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