ONET1130EC datasheet(7/60 Pages) TI1

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ONET1130EC

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SLLSEJ3A – JUNE 2015 – REVISED JULY 2015

DC Electrical Characteristics (continued)

Over recommended operating conditions, open loop operation, VOUT = 2 VPP single-ended, I(BIAS) = 80 mA, unless otherwise

noted. Typical operating condition is at VCC = 2.5 V and TA = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Photodiode reverse bias voltage

APC active, I(PD) = 1500 μA

1.3

2.3

Photodiode fault current level

Percent of target I(PD)

(2)

150%

V(PD)

I(MONP) / I(PD) with control bit PDRNG = 1X

10%

12.5%

15%

Photodiode current monitor ratio

I(MONP) / I(PD) with control bit PDRNG = 01

20%

25%

30%

I(MONP) / I(PD) with control bit TXPDRNG = 00

40%

50%

60%

Monitor diode DMI accuracy

With external mid-scale calibration

±10%

Bias current monitor ratio

I(MONB) / I(BIAS) (nominal 1/100 = 1%), V(MONB) < 1.5V

0.9%

1.1%

Bias current DMI accuracy

I(BIAS) ≥ 20 mA

–15%

15%

Power supply monitor accuracy

With external mid-scale calibration

–2%

V(CC-RST)

VCC reset threshold voltage

VCC voltage level which triggers power-on reset

1.8

2.1

V(CC-

VCC reset threshold voltage

100

RSTHYS)

hysteresis

TXFLTEN = 1, TXDMONB = 0, Fault occurs if voltage at

V(MONB-FLT) Fault voltage at MONB

1.15

1.2

1.25

MONB exceeds this value

TXFLTEN = 1, TXMONPFLT = 1, TXDMONP = 0, Fault

V(MONP-FLT) Fault voltage at MONP

1.15

1.2

1.25

occurs if voltage at MONP exceeds this value

(2)

Assured by design over process, supply and temperature variation

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