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LMH6503 bảng dữ liệu(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
tên linh kiện LMH6503
Giải thích chi tiết về linh kiện  Wideband, Low Power, Linear Variable Gain Amplifier
PDF  20 Pages
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nhà sản xuất  NSC [National Semiconductor (TI)]
Trang chủ  http://www.national.com
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LMH6503 bảng dữ liệu(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Tolerance: (Note 4)
Human Body
2KV
Machine Model
200V
Input Current
±10mA
V
IN Differential
±(V+ −V)
Output Current
120mA (Note 3)
Supply Voltages (V
+ -V)
12.6V
Voltage at Input/ Output pins
V
+ +0.8V,V- 0.8V
Soldering Information:
Infrared or Convection (20 sec)
235˚C
Wave Soldering (10 sec)
260˚C
Storage Temperature Range
−65˚C to +150˚C
Junction Temperature
+150˚C
Operating Ratings (Note 1)
Supply Voltages (V
+ -V)
5Vto12V
Temperature Range
−40˚C to +85˚C
Thermal Resistance:
θ
JA
θ
JC
14-Pin SOIC
138˚C/W
45˚C/W
14-Pin TSSOP
160˚C/W
51˚C/W
Electrical Characteristics(Note 2)
Unless otherwise specified, all limits guaranteed for T
J = 25˚C, VS = ±5V, AV(MAX) = 10, VCM = 0V, RF =1k
Ω,R
G = 174
Ω,V
IN-
_DIFF
= ±0.1V, R
L = 100
Ω,V
G = +1V. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
(Note 6)
Typ
(Note 6)
Max
(Note 6)
Units
Frequency Domain Response
BW
-3dB Bandwidth
V
OUT < 0.5PP
135
MHz
V
OUT < 0.5PP,AV(MAX) = 100
50
GF
Gain Flatness
V
OUT < 0.5VPP,
−1V < V
G < 1V, ±0.2dB
40
MHz
Att Range Flat Band (Relative to Max Gain)
Attenuation Range (Note 13)
±0.2dB Flatness, f < 30MHZ
20
MHz
±0.1dB, f < 30MHZ
6.6
BW
Control
Gain Control Bandwidth
V
G = 0V (Note 11)
100
MHz
PL
Linear Phase Deviation
DC to 60MHz
1.6
deg
G Delay
Group Delay
DC to 130MHz
2.6
ns
CT (dB)
Feed-through
V
G = −1.2V, 30MHz (Output
Referred)
−48
dB
GR
Gain Adjustment Range
f < 10MHz
79
dB
f < 30MHz
68
Time Domain Response
t
r ,tf
Rise and Fall Time
0.5V Step
2.2
ns
OS%
Overshoot
0.5V Step
10
%
SR
Slew Rate
4V Step (Note 5)
1800
V/µs
∆G Rate
Gain Change Rate
V
IN = 0.3V, 10%−90% of final
output
4.6
dB/ns
Distortion & Noise performance
HD2
2
nd Harmonic Distortion
2V
PP, 20MHz
−60
dBc
HD3
3
rdHarmonic Distortion
2V
PP, 20MHz
−61
dBc
THD
Total Harmonic Distortion
2V
PP, 20MHz
−57
dBc
En tot
Total Equivalent Input Noise
1MHz to 150MHz
6.6
nV/
I
n
Input Noise Current
1MHz to 150MHz
2.4
pA/
DG
Differential Gain
f = 4.43MHz, R
L = 150
Ω, Neg.
Sync
0.15
%
DP
Differential Phase
f = 4.43MHz, R
L = 150
Ω, Neg.
Sync
0.22
deg
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