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LPV521 bảng dữ liệu(PDF) 7 Page - Texas Instruments

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tên linh kiện LPV521
Giải thích chi tiết về linh kiện  NanoPower, 1.8-V, RRIO, CMOS Input, Operational Amplifier
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LPV521 bảng dữ liệu(HTML) 7 Page - Texas Instruments

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LPV521
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SNOSB14D – AUGUST 2009 – REVISED DECEMBER 2014
6.8 3.3-V AC Electrical Characteristics
Unless otherwise is specified, all limits for TA = 25°C, V
+ = 3.3 V, V− = 0 V, V
CM = VO = V
+/2, and R
L > 1 MΩ.
(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
GBW
Gain-Bandwidth Product
CL = 20 pF, RL = 100 kΩ
6.2
kHz
SR
Slew Rate
AV = +1,
Falling Edge
2.9
V/ms
VIN = 0V to 3.3V
Rising Edge
2.5
θ m
Phase Margin
CL = 20 pF, RL = 10 kΩ
73
deg
Gm
Gain Margin
CL = 20 pF, RL = 10 kΩ
19
dB
en
Input-Referred Voltage Noise Density
f = 100 Hz
259
nV/
√Hz
Input-Referred Voltage Noise
0.1 Hz to 10 Hz
22
μVPP
In
Input-Referred Current Noise
f = 100 Hz
100
fA/
√Hz
(1)
Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
6.9 5-V DC Electrical Characteristics
Unless otherwise specified, all limits for TA = 25°C, V
+ = 5 V, V− = 0 V, V
CM = VO = V
+/2, and R
L > 1 MΩ.
(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOS
Input Offset Voltage
VCM = 0.3 V
0.1
±1
Temperature extremes
–1.23
1.23
mV
VCM = 4.7 V
0.1
±1
Temperature extremes
–1.23
1.23
TCVOS
Input Offset Voltage Drift(2)
±0.4
μV/°C
Temperature extremes
–3.5
3.5
IBIAS
Input Bias Current
0.04
±1
pA
Temperature extremes
–50
50
IOS
Input Offset Current
60
fA
CMRR
Common Mode Rejection Ratio
0 V
≤ VCM ≤ 5.0 V
75
102
Temperature extremes
74
0 V
≤ VCM ≤ 3.9 V
84
108
dB
Temperature extremes
80
77
115
Temperature extremes
76
PSRR
Power Supply Rejection Ratio
1.6 V
≤ V+ ≤ 5.5 V
85
109
VCM = 0.3 V
dB
Temperature extremes
76
CMVR
Common Mode Voltage Range
CMRR
≥ 75 dB
−0.1
5.1
CMRR
≥ 74 dB
V
Temperature extremes
0
5
AVOL
Large Signal Voltage Gain
VO = 0.5 V to 4.5 V
84
132
dB
RL = 100 kΩ to V
+/2
Temperature extremes
76
(1)
Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in
very limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables
under conditions of internal self-heating where TJ TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2)
The offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature
change.
Copyright © 2009–2014, Texas Instruments Incorporated
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