BLF647 datasheet(4/16 Pages) PHILIPS

4 / 16 page

2001 Nov 27

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF647

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.2 K/W, unless otherwise speciﬁed.

Ruggedness in class-AB operation

The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the

following conditions: VDS = 28 V; f = 100 MHz at rated load power.

The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.

Impedances (per section)

At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 Ω and ZL = 2.7 + j0.7 Ω.

At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 Ω and ZL = 1.8 + j0.7 Ω.

MODE OF OPERATION

(MHz)

VDS

(V)

(W)

(dB)

(%)

dim

(dBc)

CW, class-AB

600

120

>14.5

>55

−

2-tone, class-AB

f1 = 600; f2 = 600.1

120 (PEP)

>14.5

>40

≤−26

CW, class-AB

800

150

typ. 12.5

typ. 60

−

2-tone, class-AB

f1 = 800; f2 = 800.1

150 (PEP)

typ. 13

typ. 45

typ.

−30

BLF647 bảng dữ liệu(PDF) 4 Page - NXP Semiconductors

BLF647 bảng dữ liệu(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

bảng dữ liệu tải về

Link URL