7

DS90CF366, DS90CF386

www.ti.com

SNLS055J – NOVEMBER 1999 – REVISED MAY 2016

Product Folder Links: DS90CF366 DS90CF386

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Copyright © 1999–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

–0.3

4

V

CMOS/LVCMOS output voltage

–0.3

V

LVDS receiver input voltage

–0.3

V

Power dissipation capacity at 25°C

DS90CF366, TSSOP package

1.61

W

DS90CF386

TSSOP package

1.89

NFBGA package

2

Lead temperature

TSSOP soldering (4 s)

260

°C

NFBGA soldering, reflow (20 s)

220

150

°C

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±7000

V

±700

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Supply voltage

3

3.3

3.6

V

Receiver input

0

2.4

V

Supply noise voltage

100

Operating free-air temperature

–10

25

70

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

DS90CF366

DS90CF386

UNIT

DGG (TSSOP)

DGG (TSSOP)

NZC (NFBGA)

48 PINS

56 PINS

64 PINS

Junction-to-ambient thermal resistance

67.8

64.6

65.7

°C/W

Junction-to-case (top) thermal resistance

22.1

20.6

23.8

°C/W

Junction-to-board thermal resistance

34.8

33.3

44.9

°C/W

Junction-to-top characterization parameter

1.1

1

1

°C/W

Junction-to-board characterization parameter

34.5

33

44.9

°C/W