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DS1921 bảng dữ liệu(PDF) 31 Page - Dallas Semiconductor

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DS1921 bảng dữ liệu(HTML) 31 Page - Dallas Semiconductor

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DS1921H/Z
31 of 44
READ/WRITE TIMING DIAGRAM Figure 15
Write-One Time Slot
RESISTOR
MASTER
VPUP
VIHMASTER
VTH
VTL
VILMAX
0V
tF
tSLOT
tW1L
ε
Write-Zero Time Slot
RESISTOR
MASTER
tREC
VPUP
VIHMASTER
VTH
VTL
VILMAX
0V
tF
tSLOT
tW0L
Read-Data Time Slot
RESISTOR
MASTER
DS1921H/Z
tREC
VPUP
VIHMASTER
VTH
VTL
VILMAX
0V
Master
Sampling
Window
δ
tF
tSLOT
tRL
tMSR
Slave to Master
A read-data time slot begins like a write-one time slot. The voltage on the data line must remain below
VTL until the read low time tRL is expired. During the tRL window, when responding with a 0, the
DS1921H/Z will start pulling the data line low; its internal timing generator determines when this pull-
down ends and the voltage starts rising again. When responding with a 1, the DS1921H/Z will not hold
the data line low at all, and the voltage starts rising as soon as tRL is over.
The sum of tRL +
δ (rise rime) on one side and the internal timing generator of the DS1921H/Z on the
other side define the master sampling window (tMSRMIN to tMSRMAX) in which the master must perform a
read from the data line. For most reliable communication, tRL should be as short as permissible and the
master should read close to but no later than tMSRMAX. After reading from the data line, the master must
wait until tSLOT is expired. This guarantees sufficient recovery time tREC for the DS1921H/Z to get ready
for the next time slot.



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