20 W HMIC Silicon PIN Diode Terminated SPDT Switch

8.0 - 10.5 GHz

Rev. V1

MASW-011071

2

2

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2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

8.0 GHz

8.5 GHz

9.5 GHz

10.5 GHz

dB

—

0.9

1.0

1.0

1.2

—

—

1.4

—

Input to Output Isolation

8.0 GHz

8.5 GHz

9.5 GHz

10.5 GHz

dB

—

—

32

—

36

37

39

38

—

Input Return Loss

8.0 GHz

8.5 GHz

9.5 GHz

10.5 GHz

dB

—

26

26

31

19

—

Return Loss (Termination)

8.0 GHz

8.5 GHz

9.5 GHz

10.5 GHz

dB

—

—

14

—

12

16

28

18

—

P0.1dB

9.5 GHz

(+5 V, -30 V)

dBm

—

44.5

—

Input IP3

10 GHz, +20 dBm,

10 MHz spacing

dBm

—

60

—

10 GHz, +/- 4 V, PW 500 ns,

50% duty cycle

ns

—

130

—

5. See Driver Connections table.

6. Typical switching speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers. MACOM recommends the

MADR-007097, Complementary Channel TTL PIN Diode Driver.

DC Control Voltages

(DC Currents)

Condition of

RF Output

B2

B3

J1-J2

J1-J3

(0 mA)

+5 V

(55 mA typ.)

Insertion

Loss

Isolation

+5 V

(55 mA typ.)

(0 mA)

Isolation

Insertion

Loss

Driver Connections

Optimal operation is achieved by simultaneous

application of negative DC voltage to the low loss

switch path and positive DC voltage to the isolating

switch path.

In the low loss path, the diodes are reverse biased.

In the isolating path, the diodes are forward biased.

Minimum Reverse Bias Required:

At X-Band, with a 1:1 match, 5 V of reverse bias is

required. With a 4:1 match, 10 V of reverse bias is

required.

However MACOM recommends 30 V of reverse bias

to achieve optimal operating conditions.

7. R. Caverly and G. Hiller, “Establishing the Minimum Reverse

Bias for a P-I-N Diode in a High Power Switch,” IEEE

Transactions on Microwave Theory and Techniques, Vol.38,

No.12, December 1990.