SSM5G06FE

2014-03-01

1

Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode

SSM5G06FE

DC-DC Converter Applications

• Combined a P-channel MOSFET and a Schottky barrier diode in one

package.

• Optimum for high-density mounting in small packages

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

−20

V

Gate-Source voltage

±10

V

DC

−100

Drain current

Pulse

−200

mA

Power dissipation

150

mW

Channel temperature

150

°C

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

15

V

Reverse voltage

12

V

Average forward current

100

mA

Peak one cycle surge forward current

(10ms)

1 (50 Hz)

A

Junction temperature

125

°C

Characteristics

Symbol

Rating

Unit

Storage temperature range

−55 to 125

°C

Operating temperature range

−40 to 100

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Total rating. Mounted on an FR4 board. (25.4 mm

Unit: mm

ESV

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-2P1C

Weight: 3 mg (Typ.)

1.2±0.05

1.6±0.05

1

2

3

5

4

1：Gate

2：Source

3：Anode

4：Cathode

5：Drain

0.3 mm

Start of commercial production

2002-08