CSD85302LT datasheet(1/13 Pages) TI1

tên linh kiện	CSD85302LT

Giải thích chi tiết về linh kiện	20 V Dual N-Channel NexFET Power MOSFET

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VGS - Gate-to-Source Voltage (V)

0

1

2

3

4

5

6

7

8

9

10

0

6

12

18

24

30

36

42

48

54

60

D007

TC = 25°C, I S = 2 A

TC = 125°C, I S = 2 A

Qg - Gate Charge (nC)

0

2

4

6

8

10

12

0

1

2

3

4

5

6

7

8

D004

IS1S2 = 2 A

VS1S2 = 10 V

Gate 2

Source 2

Gate 1

Source 1

G1

G2

S2

S1

Product

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CSD85302L

SLPS561 – NOVEMBER 2015

CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET

Text added for spacing

1 Features

1

•

Common Drain Configuration

Product Summary

•

Low On-Resistance

TA = 25°C

TYPICAL VALUE

UNIT

•

Small Footprint of 1.35 mm × 1.35 mm

VS1S2

Source-to-Source Voltage

20

V

Qg

Gate Charge Total (4.5 V)

6

nC

•

Pb Free and Halogen Free

Qgd

Gate Charge Gate-to-Drain

1.4

nC

•

RoHS Compliant

VGS = 2.5 V

29

m

Ω

•

ESD HBM Protection >2.5 kV

RS1S2(on)

Source-to-Source On-Resistance VGS = 4.5 V

20

m

Ω

VGS = 6.5 V

18.7

m

Ω

2 Applications

VGS(th)

Threshold Voltage

0.9

V

•

USB Type-C/PD

•

Battery Management

Ordering Information(1)

•

Battery Protection

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD85302L

3000

7-Inch

1.35 × 1.35 mm Land Grid

Tape and

Reel

Array (LGA) Package

Reel

3 Description

CSD85302LT

250

This 20 V, 18.7 m

Ω, 1.35 mm × 1.35 mm LGA Dual

(1) For all available packages, see the orderable addendum at

NexFET™ power MOSFET is designed to minimize

the end of the data sheet.

resistance in the smallest footprint. Its small footprint

and common drain configuration make the device

Absolute Maximum Ratings

ideal

for

battery-powered

applications

in

small

TA = 25°C

VALUE

UNIT

handheld devices.

VS1S2

Source-to-Source Voltage

20

V

VGS

Gate-to-Source Voltage

±10

V

Top View

IS

Continuous Source Current(1)

7

A

ISM

Pulsed Source Current(2)

37

A

PD

Power Dissipation(1)

1.7

W

V(ESD)

Human Body Model (HBM)

2.5

kV

TJ,

Operating Junction and

–55 to 150

°C

Tstg

Storage Temperature Range

(1) Typical RθJA = 75°C/W when mounted on a 1 inch

2, 2 oz. Cu

pad on a 0.06 inch thick FR4 PCB.

Configuration

(2) Max RθJA = 90°C/W, pulse duration ≤100 μs, duty cycle ≤1%

.

RDS(on) vs VGS

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

Số phần tương tự - CSD85302LT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Texas Instruments	CSD85302LT	474Kb / 12P	CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET NOVEMBER 2015
Texas Instruments	CSD85302LT.B	474Kb / 12P	CSD85302L 20 V Dual N-Channel NexFET™ Power MOSFET NOVEMBER 2015

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