CSD85302L

www.ti.com

SLPS561 – NOVEMBER 2015

6 Device and Documentation Support

6.1 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

6.2 Trademarks

NexFET, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

6.3 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

6.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

Copyright © 2015, Texas Instruments Incorporated

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