SD18532NQ5B datasheet(6/15 Pages) TI1

6 / 15 page

TC - Case Temperature (°C)

-50

-25

100

125

150

175

100

120

D012

VDS - Drain-to-Source Voltage (V)

0.1

100

0.1

100

1000

D010

10 ms

1 ms

100 µs

10 µs

TAV - Time in Avalanche (ms)

0.01

0.1

100

300

D011

TC = 25q C

TC = 125q C

TC - Case Temperature (°C)

-75

-50

-25

100

125

150

175

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

D008

VGS = 6 V

VGS = 10 V

VSD - Source-to-Drain Voltage (V)

0.2

0.4

0.6

0.8

0.0001

0.001

0.01

0.1

100

D009

TC = 25°C

TC = 125°C

CSD18532NQ5B

SLPS440A – JUNE 2013 – REVISED DECEMBER 2015

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

ID = 25 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

Single Pulse, Max RθJC = 0.8°C/W

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature

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