SD18532NQ5B datasheet(3/15 Pages) TI1

3 / 15 page

CSD18532NQ5B

www.ti.com

SLPS440A – JUNE 2013 – REVISED DECEMBER 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 48 V

μA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, ID = 250 μA

2.4

2.8

3.4

VGS = 6 V, ID = 25 A

3.5

4.4

Ω

RDS(on)

Drain-to-source on-resistance

VGS = 10 V, ID = 25 A

2.7

3.4

Ω

gfs

Transconductance

VDS = 30 V, ID = 25 A

140

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

4100

5340

Coss

Output capacitance

VGS = 0 V, VDS = 30 V, ƒ = 1 MHz

495

644

Crss

Reverse transfer capacitance

Series gate resistance

1.2

2.4

Ω

Gate charge total (10 V)

VDS = 30 V, ID = 25 A

Qgd

Gate charge gate to drain

7.9

Qgs

Gate charge gate to source

Qg(th)

Gate charge at Vth

Qoss

Output charge

VDS = 30 V, VGS = 0 V

td(on)

Turn on delay time

8.2

Rise time

8.7

VDS = 30 V, VGS = 10 V,

IDS = 25 A, RG = 0 Ω

td(off)

Turn off delay time

Fall time

2.7

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 25 A, VGS = 0 V

0.8

Qrr

Reverse recovery charge

139

VDS= 30 V, IF = 25 A,

di/dt = 300 A/

μs

trr

Reverse recovery time

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-case thermal resistance(1)

0.8

°C/W

RθJA

Junction-to-ambient thermal resistance (1)(2)

°C/W

(1)

RθJC is determined with the device mounted on a 1 inch

2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm ×

3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.

(2)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

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