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ISL70003ASEH bảng dữ liệu(PDF) 13 Page - Intersil Corporation |
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ISL70003ASEH bảng dữ liệu(HTML) 13 Page - Intersil Corporation |
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13 / 36 page ![]() ISL70003ASEH 13 FN8746.0 August 5, 2015 Submit Document Feedback ERROR AMPLIFIER DC Gain (Note 12)80 dB Gain-bandwidth Product (Note 12)7 MHz Maximum Output Voltage VIN = 5.5V 3.5 4.2 V Slew Rate (Note 12)8.5 V/µs Feedback (FB) Input Leakage Current VFB = 0.6V, PVINx = 13.2V 250 nA Offset Voltage (VIO) -3 0 3 mV POWER BLOCKS CQFP Individual Upper FET rDS(ON) PVINx = 3.0V, PVIN to LX 170 420 700 mΩ PVINx = 5.5V, PVIN to LX 120 310 600 mΩ CQFP Individual Lower FET rDS(ON) PVINx = 3.0V, LX to GND 90 240 455 mΩ PVINx = 5.5V, LX to GND 60 210 425 mΩ LXx Output Leakage EN = LXx = GND, single LXx output 1 3 µA EN = GND, LXx = PVINx, Single LXx Output 1 3 µA Dead Time Within a single power block or between power blocks (Note 12) 4 ns POWER-GOOD SIGNAL Rising Threshold VFB as a % of VREF 107 111 115 % Rising Hysteresis VFB as a % of VREF 2 3.5 5 % Falling Threshold VFB as a % of VREF 85 89 93 % Falling Hysteresis VFB as a % of VREF 2 3.5 5 % Power-good Drive PVIN = 3V, PGOOD = 0.4V, EN = GND 7.2 mA Power-good Leakage PVIN = PGOOD = 13.2V 1 µA PROTECTION FEATURES Undervoltage Protection Undervoltage Trip Threshold VFB as a % of VREF, test mode 71 75 79 % Undervoltage Recovery Threshold VFB as a % of VREF, test mode 86 90 94 % Overcurrent Protection Overcurrent Accuracy ROCSETA, B = 6kΩ (IOC = 0.6A/LX) VIN = 12V 0.43 0.6 0.77 A/LX Electrical Specifications Unless otherwise noted, PVINx = AVDD = DVDD = 3V - 13.2V; GND = AGND = DGND = PGNDx = SGND = 0V; POR_VIN = 0.65V; SYNC = LXx = Open Circuit; PGOOD is pulled up to VREFD with a 3k resistor; REF is bypassed to GND with a 220nF capacitor; SS is bypassed to GND with a 100nF capacitor; IOUT = 0A; TA = TJ = +25°C. (Note 4). Boldface limits apply across the operating temperature range, -55°C to +125°C; over a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 to 300rad(Si)/s; or over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of <10mrad(Si)/s. (Continued) PARAMETER TEST CONDITIONS MIN (Note 13)TYP MAX (Note 13)UNIT |
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