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ISL70003ASEH bảng dữ liệu(PDF) 13 Page - Intersil Corporation

tên linh kiện ISL70003ASEH
Giải thích chi tiết về linh kiện  Radiation and SEE Tolerant 3V to 13.2V, 9A Buck Regulator
PDF  36 Pages
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nhà sản xuất  INTERSIL [Intersil Corporation]
Trang chủ  http://www.intersil.com/cda/home
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ISL70003ASEH bảng dữ liệu(HTML) 13 Page - Intersil Corporation

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ISL70003ASEH
13
FN8746.0
August 5, 2015
Submit Document Feedback
ERROR AMPLIFIER
DC Gain
(Note 12)80
dB
Gain-bandwidth Product
(Note 12)7
MHz
Maximum Output Voltage
VIN = 5.5V
3.5
4.2
V
Slew Rate
(Note 12)8.5
V/µs
Feedback (FB) Input Leakage Current
VFB = 0.6V, PVINx = 13.2V
250
nA
Offset Voltage (VIO)
-3
0
3
mV
POWER BLOCKS
CQFP Individual Upper FET rDS(ON)
PVINx = 3.0V, PVIN to LX
170
420
700
mΩ
PVINx = 5.5V, PVIN to LX
120
310
600
mΩ
CQFP Individual Lower FET rDS(ON)
PVINx = 3.0V, LX to GND
90
240
455
mΩ
PVINx = 5.5V, LX to GND
60
210
425
mΩ
LXx Output Leakage
EN = LXx = GND, single LXx output
1
3
µA
EN = GND, LXx = PVINx, Single LXx Output
1
3
µA
Dead Time
Within a single power block or between power
blocks (Note 12)
4
ns
POWER-GOOD SIGNAL
Rising Threshold
VFB as a % of VREF
107
111
115
%
Rising Hysteresis
VFB as a % of VREF
2
3.5
5
%
Falling Threshold
VFB as a % of VREF
85
89
93
%
Falling Hysteresis
VFB as a % of VREF
2
3.5
5
%
Power-good Drive
PVIN = 3V, PGOOD = 0.4V, EN = GND
7.2
mA
Power-good Leakage
PVIN = PGOOD = 13.2V
1
µA
PROTECTION FEATURES
Undervoltage Protection
Undervoltage Trip Threshold
VFB as a % of VREF, test mode
71
75
79
%
Undervoltage Recovery Threshold
VFB as a % of VREF, test mode
86
90
94
%
Overcurrent Protection
Overcurrent Accuracy
ROCSETA, B = 6kΩ (IOC = 0.6A/LX) VIN = 12V
0.43
0.6
0.77
A/LX
Electrical Specifications Unless otherwise noted, PVINx = AVDD = DVDD = 3V - 13.2V; GND = AGND = DGND = PGNDx = SGND = 0V;
POR_VIN = 0.65V; SYNC = LXx = Open Circuit; PGOOD is pulled up to VREFD with a 3k resistor; REF is bypassed to GND with a 220nF capacitor; SS is
bypassed to GND with a 100nF capacitor; IOUT = 0A; TA = TJ = +25°C. (Note 4). Boldface limits apply across the operating temperature range, -55°C to
+125°C; over a total ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 to 300rad(Si)/s; or over a total ionizing dose of 50krad(Si) with
exposure at a low dose rate of <10mrad(Si)/s. (Continued)
PARAMETER
TEST CONDITIONS
MIN
(Note 13)TYP
MAX
(Note 13)UNIT



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