BC847QAS datasheet(6/13 Pages) NXP

6 / 13 page

NXP Semiconductors

BC847QAS

45 V, 100 mA NPN/NPN general-purpose transistor

BC847QAS

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Product data sheet

8 July 2015

6 / 13

mgt727

10-1

102

103

IC (mA)

600

500

400

300

200

100

hFE

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig. 4. DC current gain as a function of collector

current; typical values

VCE (V)

006aab422

0.10

0.05

0.15

0.20

(A)

IB (mA) = 4.0

0.8

0.4

3.6

3.2

1.6

2.4

2.8

2.0

1.2

Tamb = 25 °C

Fig. 5. Collector current as a function of collector-

emitter voltage; typical values

1200

1000

800

600

400

200

mgt728

10- 2

10- 1

102

103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 6. Base-emitter voltage as a function of collector

current; typical values

006aab423

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10- 1

103

102

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = -55 °C

(2) Tamb = 25 °C

(3) Tamb = 150 °C

Fig. 7. Base-emitter saturation voltage as a function of

collector current; typical values

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