BC847QAS datasheet(5/13 Pages) NXP

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NXP Semiconductors

BC847QAS

45 V, 100 mA NPN/NPN general-purpose transistor

BC847QAS

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Product data sheet

8 July 2015

5 / 13

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

VCB = 30 V; IE = 0 A; Tj = 150 °C

µA

ICBO

collector-base cut-off

current

VCB = 30 V; IE = 0 A; Tamb = 25 °C

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

100

hFE

DC current gain

VCE = 5 V; IC = 2 mA; Tamb = 25 °C

200

450

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

100

VCEsat

collector-emitter

saturation voltage

IC = 100 mA; IB = 5 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

300

IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C

760

VBEsat

base-emitter saturation

voltage

IC = 100 mA; IB = 5 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

900

VCE = 5 V; IC = 2 mA; Tamb = 25 °C

600

660

725

VBE

base-emitter voltage

VCE = 5 V; IC = 10 mA; Tamb = 25 °C

710

820

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

emitter capacitance

VEB = 0.5 V; IC = 0 A; f = 1 MHz;

Tamb = 25 °C

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

100

MHz

noise figure

VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ;

f = 1 MHz; B = 200 Hz; Tamb = 25 °C

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