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STM32L162VD bảng dữ liệu(PDF) 75 Page - STMicroelectronics

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STM32L162VD bảng dữ liệu(HTML) 75 Page - STMicroelectronics

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STM32L162VD-X
Electrical characteristics
107
6.3.7
Internal clock source characteristics
The parameters given in Table 29 are derived from tests performed under the conditions
summarized in Table 12.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Table 29. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
-
16
-
MHz
TRIM
(1)(2)
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
HSI user-trimmed
resolution
Trimming code is not a multiple of 16
-
± 0.4
0.7
%
Trimming code is a multiple of 16
-
-
± 1.5
%
ACCHSI(2)
2. Guaranteed by characterization results.
Accuracy of the
factory-calibrated
HSI oscillator
VDDA = 3.0 V, TA = 25 °C
-1(3)
3. Guaranteed by test in production.
-1(3)
%
VDDA = 3.0 V, TA = 0 to 55 °C
-1.5
-
1.5
%
VDDA = 3.0 V, TA = -10 to 70 °C
-2
-
2
%
VDDA = 3.0 V, TA = -10 to 85 °C
-2.5
-
2
%
VDDA = 3.0 V, TA = -10 to 105 °C
-4
-
2
%
VDDA = 1.65 V to 3.6 V
TA = -40 to 105 °C
-4
-
3
%
tSU(HSI)(2)
HSI oscillator
startup time
-
-
3.7
6
µs
IDD(HSI)(2)
HSI oscillator
power consumption
-
-
100
140
µA
Table 30. LSI oscillator characteristics
Symbol
Parameter
Min
Typ
Max
Unit
fLSI(1)
1. Guaranteed by test in production.
LSI frequency
26
38
56
kHz
DLSI(2)
2. This is a deviation for an individual part, once the initial frequency has been measured.
LSI oscillator frequency drift
0°C
≤TA ≤ 105°C
-10
-
4
%
tsu(LSI)(3)
3. Guaranteed by design.
LSI oscillator startup time
-
-
200
µs
IDD(LSI)(3) LSI oscillator power consumption
-
400
510
nA



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