SPC560D30L3 datasheet(53/90 Pages) STMICROELECTRONICS

53 / 90 page

SPC560D30x, SPC56040Dx

Electrical characteristics

Doc ID 16315 Rev 7

53/90

4.12.3

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n + 1) supply pin). This test

conforms to the AEC-Q100-002/-003/-011 standard. For more details, refer to the

application note Electrostatic Discharge Sensitivity Measurement (AN1181).

Table 33.

EMI radiated emission measurement(1)(2)

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

—

SR — Scan range

—

0.150

—

1000 MHz

fCPU SR — Operating frequency

—

MHz

VDD_LV SR — LV operating voltages

—

1.28

—

SEMI CC T Peak level

VDD = 5V, TA =25°C,

LQFP100 package

Test conforming to IEC 61967-2,

fOSC = 8 MHz/fCPU = 48 MHz

No PLL frequency

modulation

—

dBµV

± 2% PLL frequency

modulation

—

dBµV

EMI testing and I/O port waveforms per IEC 61967-1, -2, -4

For information on conducted emission and susceptibility measurement (norm IEC 61967-4), please contact your local

marketing representative.

Table 34.

ESD absolute maximum ratings(1) (2)

Symbol

Ratings

Conditions

Class

Max value

Unit

VESD(HBM)

Electrostatic discharge voltage

(Human Body Model)

TA = 25 °C

conforming to AEC-Q100-002

H1C

2000

VESD(MM)

Electrostatic discharge voltage

(Machine Model)

TA = 25 °C

conforming to AEC-Q100-003

200

VESD(CDM)

Electrostatic discharge voltage

(Charged Device Model)

TA = 25 °C

conforming to AEC-Q100-011

C3A

500

750 (corners)

All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.

A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification

requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at

room temperature followed by hot temperature, unless specified otherwise in the device specification.

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