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USB2250I bảng dữ liệu(PDF) 14 Page - Microchip Technology

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 2009 - 2015 Microchip Technology Inc.
DS00002005A-page 14
USB2250/50i/51/51i
Memory
Address Bus
MA16
28
O12
These signals address memory locations within
the external memory.
MA[15:2]
2
4
107
1
113
24
111
109
106
108
110
112
114
116
O12
These signals address memory locations within
the external memory.
MA[1:0] /
CLK_
SEL[1:0]
25
27
O12
MA[1:0]: These signals address memory
locations within the external memory.
I/O12PD
CLK_SEL[1:0]: During RESET_N assertion,
these pins will select the operating frequency of
the external clock, and the corresponding weak
pull-down resistors are enabled.
When RESET_N is negated, the value on these
pins will be latched internally and these pins will
revert to MA[1:0] functionality; the internal pull-
downs will be disabled.
CLK_SEL[1:0] = '00'. 24 MHz
CLK_SEL[1:0] = '01'. RESERVED
CLK_SEL[1:0] = '10'. RESERVED
CLK_SEL[1:0] = '11'. 48 MHz
If the latched value is '1', the corresponding MA
pin is tri-stated when the chip is in power down
state.
If the latched value is '0', the corresponding MA
pin will function identically to MA[15:3] pins at all
times (other than during RESET_N assertion).
Memory Write
Strobe
nMWR
3
O12
This pin is the active low program Memory Write
strobe signal.
Memory Read
Strobe
nMRD
115
O12
This pin is the active low program Memory Read
strobe signal.
Memory Chip
Enable
nMCE
26
O12
This pin is the active low program Memory Chip
Enable strobe signal.
This signal is asserted when any external
access is being done by the processor.
This signal is held to the logic 'high' while
RESET_N is asserted.
TABLE 5-1:
USB2250/50I/51/51I 128-PIN VTQFP PIN DESCRIPTIONS (CONTINUED)
Name
Symbol
128-Pin
VTQFP
Buffer
Type
Description



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