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EM3596-RTR bảng dữ liệu(PDF) 14 Page - Silicon Laboratories

tên linh kiện EM3596-RTR
Giải thích chi tiết về linh kiện  High-Performance, Integrated ZigBee
PDF  59 Pages
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nhà sản xuất  SILABS [Silicon Laboratories]
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EM359x
14
Rev 1.0
3.3. Environmental Characteristics
Table 3.3 lists the rated environmental characteristics of the EM359x.
3.4. DC Electrical Characteristics
Table 3.4 lists the DC electrical characteristics of the EM359x.
Table 3.3. Environmental Characteristics
Parameter
Test Condition
Min
Typ
Max
Unit
ESD (human body model)
On any pin
—
—
±2
kV
ESD (charged device model)
Non-RF pins
—
—
±400
V
ESD (charged device model)
RF pins
—
—
±225
V
Table 3.4. DC Characteristics
Parameter
Test Condition
Min
Typ
Max
Unit
Regulator input voltage
(VDD_PADS)
2.1
—
3.6
V
Power supply range (VDD_MEM)
Regulator output or external input
1.7
1.8
1.9
V
Power supply range (VDD_CORE)
Regulator output
1.18
1.25
1.32
V
Deep Sleep Current
Quiescent current, internal oscilla-
tor disabled, 4 kB RAM retained
–40 °C, VDD_PADS=3.6 V
—
0.9
—
A
+25 °C, VDD_PADS=3.6 V
—
1.0
—
A
+85 °C, VDD_PADS=3.6 V
—
2.2
—
A
Quiescent current, including
internal RC oscillator, 4 kB RAM
retained
–40 °C, VDD_PADS=3.6 V
—
1.2
—
A
+25 °C, VDD_PADS=3.6 V
—
1.25
—
A
+85°C, VDD_PADS=3.6 V
—
2.5
—
A
Quiescent current, including
32.768 kHz oscillator, 4 kB RAM
retained
–40 °C, VDD_PADS=3.6 V
—
1.3
—
A
+25 °C, VDD_PADS=3.6 V
—
1.6
—
A
+85 °C, VDD_PADS=3.6 V
—
2.9
—
A
Quiescent current, including
internal RC oscillator and
32.768 kHz oscillator, 4 kB RAM
retained
–40 °C, VDD_PADS=3.6 V
—
1.6
—
A
+25 °C, VDD_PADS=3.6 V
—
1.9
—
A
+85 °C, VDD_PADS=3.6 V
—
3.2
—
A
Additional quiescent current per
4 kB block of RAM retained
–40 °C, VDD_PADS=3.6 V
—
0.007
—
A
+25 °C, VDD_PADS=3.6 V
—
0.067
—
A
+85 °C, VDD_PADS=3.6 V
—
0.76
—
A
Additional quiescent current when
retained RAM exceeds 32 kB
–40 °C, VDD_PADS=3.6 V
—
0.57
—
A
+25 °C, VDD_PADS=3.6 V
—
0.67
—
A
+85 °C, VDD_PADS=3.6 V
—
2.0
—
A
Simulated deep sleep (debug
mode) current
With no debugger activity
—
500
—
A



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