MTP52N06VL datasheet(3/7 Pages) ONSEMI

3 / 7 page

MTP52N06VL

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

TJ = 25°C

VGS = 10 V

7 V

8 V

5 V

4 V

3 V

100

1.0

2.5

VDS ≥ 10 V

TJ = − 55°C

100°C

25°C

VGS = 5 V

.030

100

TJ = 100°C

25°C

−55°C

TJ = 25°C

.040

VGS = 5 V

10 V

VGS = 5 V

ID = 26 A

1.6

1.4

0.6

0.4

− 50

− 25

100

125

150

VGS = 0 V

TJ = 125°C

1020

30405060

468

100

1.5

.020

.010

.030

.020

.010

110

100

100°C

175

1.8

110

3.5

4.5

5.5

0.5

110

.035

.025

.015

.005

1.2

0.8

6 V

.060

.050

.040

100

0.2

1000

.070

MTP52N06VL bảng dữ liệu(PDF) 3 Page - ON Semiconductor

MTP52N06VL bảng dữ liệu(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

bảng dữ liệu tải về

Link URL