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2N7002 bảng dữ liệu(PDF) 1 Page - Diotech Company. |
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2N7002 bảng dữ liệu(HTML) 1 Page - Diotech Company. |
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1 / 3 page ![]() 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Voltage - 60 Volts Drain Curreent - 115 mAmps FEATURES MECHANICAL DATA ● Low On-Resistance: R ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected :1000V ● Case: SOT-23, Molded Plastic ● Case Material - UL Flammability Rating Classification 94V-0 ● Terminals: Solderable per MIL-STD-202, Method 208 ● Marking: Device Code ● Weight: 0.008 grams (approx.) ● ℃ ● THERMAL CHARACTERISTICS MAXIMUM RATING (Ta = 25 ) A E J L M B C H G D K TOP VIEW D S G SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89 1.05 E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10 L 0.45 0.61 M 0.076 0.178 All Dimensions in mm DS(ON) Gate Source Drain (Top View) Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – ContinuousTC = 100°C (Note 1.) – Pulsed (Note 2.) ID ID IDM mAdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤50 µs) VGS VGSM Vdc Vpk Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25 °C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA= 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ, Tstg -55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width≤300 µs, Duty Cycle≤2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. ± 75 ± 800 ± 20 ± 40 ± 115 Simplified Schematic 1 2 3 N - Channel |
Số phần tương tự - 2N7002 |
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Mô tả tương tự - 2N7002 |
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