công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

2N7002 bảng dữ liệu(PDF) 1 Page - Diotech Company.

tên linh kiện 2N7002
Giải thích chi tiết về linh kiện  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  DIOTECH [Diotech Company.]
Trang chủ  http://www.kdiode.com
Logo DIOTECH - Diotech Company.

2N7002 bảng dữ liệu(HTML) 1 Page - Diotech Company.

  2N7002 Datasheet HTML 1Page - Diotech Company. 2N7002 Datasheet HTML 2Page - Diotech Company. 2N7002 Datasheet HTML 3Page - Diotech Company.  
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Voltage - 60 Volts
Drain Curreent - 115 mAmps
FEATURES
MECHANICAL DATA
●
Low On-Resistance: R
●
Low Gate Threshold Voltage
●
Low Input Capacitance
●
Fast Switching Speed
●
Low Input/Output Leakage
●
ESD Protected :1000V
●
Case: SOT-23, Molded Plastic
●
Case Material - UL Flammability Rating
Classification 94V-0
●
Terminals: Solderable per MIL-STD-202,
Method 208
●
Marking: Device Code
●
Weight: 0.008 grams (approx.)
●
℃
●
THERMAL CHARACTERISTICS
MAXIMUM RATING (Ta = 25 )
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.19
1.40
C
2.10
2.50
D
0.89
1.05
E
0.45
0.61
G
1.78
2.05
H
2.65
3.05
J
0.013
0.15
K
0.89
1.10
L
0.45
0.61
M
0.076
0.178
All Dimensions in mm
DS(ON)
Gate
Source
Drain
(Top View)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
Drain Current
– Continuous TC = 25°C (Note 1.)
– ContinuousTC = 100°C (Note 1.)
– Pulsed (Note 2.)
ID
ID
IDM
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤50 µs)
VGS
VGSM
Vdc
Vpk
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25 °C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA= 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
-55 to
+150
°C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width≤300 µs, Duty Cycle≤2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
± 75
± 800
± 20
± 40
± 115
Simplified Schematic
1
2
3
N - Channel


Số phần tương tự - 2N7002

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
Pan Jit International I...
2N7002 PANJIT-2N7002 Datasheet
91Kb / 6P
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
logo
NXP Semiconductors
2N7002 PHILIPS-2N7002 Datasheet
76Kb / 12P
N-channel vertical D-MOS transistor
April 1995
logo
Supertex, Inc
2N7002 SUTEX-2N7002 Datasheet
30Kb / 4P
N-Channel Enhancement-Mode Vertical DMOS FETs
logo
Vishay Siliconix
2N7002 VISHAY-2N7002 Datasheet
51Kb / 5P
N-Channel 60-V (D-S) MOSFET
16-Jul-01
logo
Zetex Semiconductors
2N7002 ZETEX-2N7002 Datasheet
25Kb / 1P
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
More results

Mô tả tương tự - 2N7002

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
NXP Semiconductors
PHD83N03LT PHILIPS-PHD83N03LT Datasheet
282Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 01-16 July 2001
PHP112N06T PHILIPS-PHP112N06T Datasheet
262Kb / 14P
N-channel enhancement mode field-effect transistor
Rev. 01-07 March 2001
PHP47NQ10T PHILIPS-PHP47NQ10T Datasheet
267Kb / 14P
N-channel enhancement mode field-effect transistor
Rev. 01-16 May 2001
PHP78NQ03LT PHILIPS-PHP78NQ03LT Datasheet
292Kb / 14P
N-channel enhancement mode field-effect transistor
Rev. 01-14 November 2001
SI4410DY PHILIPS-SI4410DY Datasheet
266Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 02-05 July 2001
SI4416DY PHILIPS-SI4416DY Datasheet
253Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 01-05 June 2001
SI4420DY PHILIPS-SI4420DY Datasheet
254Kb / 12P
N-channel enhancement mode field-effect transistor
Rev. 01-28 May 2001
SI9956DY PHILIPS-SI9956DY Datasheet
253Kb / 13P
N-channel enhancement mode field-effect transistor
Rev. 01-16 July 2001
logo
Fairchild Semiconductor
FDC633N FAIRCHILD-FDC633N Datasheet
278Kb / 4P
N-Channel Enhancement Mode Field Effect Transistor
FDT459N FAIRCHILD-FDT459N Datasheet
89Kb / 4P
N-Channel Enhancement Mode Field Effect Transistor
More results


Html Pages

1 2 3


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com