BCM856BS_BCM856DS_1

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 01 — 7 August 2008

3 of 14

NXP Semiconductors

BCM856BS; BCM856DS

PNP/PNP matched double transistors

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 5.

Marking codes

Type number

Marking code[1]

BCM856BS

*BS

BCM856BS/DG

PB*

BCM856DS

DS

BCM856DS/DG

R9

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

−80

V

collector-emitter voltage

open base

-

−65

V

emitter-base voltage

open collector

-

−5V

collector current

-

−100

mA

peak collector current

single pulse;

-

−200

mA

total power dissipation

BCM856BS (SOT363)

BCM856BS/DG (SOT363)

[1] -

200

mW

BCM856DS (SOT457)

BCM856DS/DG (SOT457)

[1] -

250

mW

Per device

total power dissipation

BCM856BS (SOT363)

BCM856BS/DG (SOT363)

[1] -

300

mW

BCM856DS (SOT457)

BCM856DS/DG (SOT457)

[1] -

380

mW

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C