SIR492DP datasheet(2/14 Pages) TFUNK

2 / 14 page

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Document Number: 68840

S-82288-Rev. B, 22-Sep-08

Vishay Siliconix

SiR492DP

New Product

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 70 °C/W.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

≤ 10 s

RthJA

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.9

3.5

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 3.1

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.4

1.0

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 12 V, VGS = 0 V

µA

VDS = 12 V, VGS = 0 V, TJ = 55 °C

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 15 A

0.0031

0.0038

VGS = 2.5 V, ID = 10 A

0.0037

0.0047

Forward Transconductancea

gfs

VDS = 5 V, ID = 15 A

110

Dynamicb

Input Capacitance

Ciss

VDS = 6 V, VGS = 0 V, f = 1 MHz

3720

Output Capacitance

Coss

1290

Reverse Transfer Capacitance

Crss

840

Total Gate Charge

VDS = 6 V, VGS = 8 V, ID = 10 A

110

VDS = 6 V, VGS = 4.5 V, ID = 10 A

Gate-Source Charge

Qgs

4.5

Gate-Drain Charge

Qgd

8.5

Gate Resistance

f = 1 MHz

1.4

2.1

Turn-On Delay Time

td(on)

VDD = 6 V, RL = 1.2 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

Rise Time

125

190

Turn-Off Delay Time

td(off)

Fall Time

Turn-On Delay Time

td(on)

VDD = 6 V, RL = 1.2 Ω

ID ≅ 5 A, VGEN = 8 V, Rg = 1 Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

915

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