TC1043 datasheet(2/20 Pages) MICROCHIP

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TC1043

DS21347B-page 2

1.0

ELECTRICAL

CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage ......................................................6.0V

Voltage on Any Pin ........... (VSS –0.3V) to (VDD +0.3V)

Junction Temperature....................................... +150°C

Operating Temperature Range............. -40°C to +85°C

Storage Temperature Range .............. -55°C to +150°C

*Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device.

These are stress ratings only and functional operation of the

device at these or any other conditions above those indi-

cated in the operation sections of the specifications is not

implied. Exposure to Absolute Maximum Rating conditions

for extended periods my affect device reliability.

TC1043 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Typical values apply at 25°C and VDD = 3V. Minimum and maximum values apply for TA =-40° to

+85°C, andVDD = 1.8V to 5.5V, unless otherwise specified.

Symbol

Parameter

Min.

Typ

Max

Units

Test Conditions

VDD

Supply Voltage

1.8

—

5.5

Supply Current Operating

—

µA

All outputs unloaded,

SHDN =VDD

ISHDN

Supply Current, Shutdown

—

µACMPTR2 and VREF Outputs

unloaded, SHDN =VSS

Shutdown Input

VIH

Input High Threshold

80% VDD

——

VIL

Input Low Threshold

—

20% VDD

ISI

Shutdown Input Current

—

±100

Op Amps

TSEL

Select Time

—

µsec

(VOUT from SHDN =VIH)

RL = 10kΩ to VSS

TDESEL

Deselect Time

—

100

—

nsec

(VOUT from SHDN =VIL)

RL = 10kΩ to VSS

ROUT(SD)

Output Resistance in Shutdown

—

Ω

SHDN =VSS

COUT(SD)

Output Capacitance in Shutdown

—

SHDN =VSS

AVOL

Large Signal Voltage Gain

—

100

—

V/mV

RL = 10kΩ,VDD =5V

VICMR

Common Mode Input Voltage Range

VSS -0.2

—

VDD +0.2

VOS

Input Offset Voltage

±100

±0.3

±500

±1.5

µV

VDD =3V, VCM =1.5V, TA =

25°C, TA = -40°C to 85°C

Input Bias Current

-100

100

TA =25°C, VCM =VDD to VSS

VOS(DRIFT)

Input Offset Voltage Drift

—

±4

—

µV/°C VDD =3V, VCM =1.5V

GBWP

Gain-Bandwidth Product

—

kHz

VDD = 1.8V to 5.5V

VO =VDD to VSS

Slew Rate

—

mV/

µsec

CL = 100pF

RL =1MΩ to GND

Gain = 1

VIN =VSS to VDD

VOUT

Output Signal Swing

VSS +0.05

—

VSS -0.05

RL = 10kΩ

CMRR

Common Mode Rejection Ratio

—

TA =25°C, VDD =5V

VCM =VDD to VSS

PSRR

Power Supply Rejection Ratio

—

TA =25°C, VCM =VSS

VDD =VDD to VSS

ISRC

Output Source Current

—

IN+=VDD,IN- = VSS

Output Shorted to VSS

VDD =1.8V, Gain =1

ISINK

Output Sink Current

—

IN+=VSS,IN- = VDD

Output Shorted to VDD

VDD =1.8V, Gain =1

Input Noise Voltage

—

µVPP 0.1Hz to 10Hz

Input Noise Voltage Density

—

125

—

nV/

√Hz 1kHz

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