PIC16F870SLASHPQ datasheet(42/156 Pages) MICROCHIP

42 / 156 page

PIC16F870/871

DS30569A-page 42

Preliminary

4.5

Reading the FLASH Program Memory

A program memory location may be read by writing two

bytes of the address to the EEADR and EEADRH reg-

isters, setting the EEPGD control bit (EECON1<7>)

and then setting control bit RD (EECON1<0>). Once

the read control bit is set, the microcontroller will use

the next two instruction cycles to read the data. The

data is available in the EEDATA and EEDATH registers

after the second NOP instruction. Therefore, it can be

read as two bytes in the following instructions. The

EEDATA and EEDATH registers will hold this value until

another read operation or until it is written to by the user

(during a write operation).

EXAMPLE 4-3:

FLASH PROGRAM READ

BSF

STATUS, RP1

;

BCF

STATUS, RP0

; Bank 2

MOVLW

ADDRH

;

MOVWF

EEADRH

; MSByte of Program Address to read

MOVLW

ADDRL

;

MOVWF

EEADR

; LSByte of Program Address to read

BSF

STATUS, RP0

; Bank 3

BSF

EECON1, EEPGD

; Point to PROGRAM memory

Required

BSF

EECON1, RD

; EEPROM Read

Sequence

NOP

; memory is read in the next two cycles after BSF EECON1,RD

NOP

;

BCF

STATUS, RP0

; Bank 2

MOVF

EEDATA, W

; W = LSByte of Program EEDATA

MOVF

EEDATH, W

; W = MSByte of Program EEDATA

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