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MMDT2907AG-AL6-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies |
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MMDT2907AG-AL6-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() MMDT2907A Preliminary DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R218-028.b ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING CHARACTERISTICS Turn-on Time tON VCC=30V, IC=150mA, IB1=15mA 30 ns Delay Time tD 8.0 ns Rise Time tR 20 ns Turn-off Time tOFF VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns Storage Time tS 60 ns Fall Time tF 20 ns Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors. TR2 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=-10mA, IB=0 -30 V Collector-Base Breakdown Voltage V(BR)CBO IC=-10µA, IE=0 -60 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10µA, IC=0 -5.0 V Collector Cutoff Current ICBO VCB=-50V, IE=0 -30 nA Emitter Cutoff Current IEBO VEB=-3.0V, IC=0 -30 nA ON CHARACTERISTICS DC Current Gain hFE IC=-1.0mA, VCE=-10V 50 IC=-10mA, VCE=-10V 75 IC=-150mA, VCE=-10V (Note 1) 100 IC=-300mA, VCE=-10V (Note 1) 30 Collector-Emitter Saturation Voltage (Note 1) VCE(sat) IC=-150mA, IB=-15mA -0.4 V IC=-300mA, IB=-30mA -1.4 V Base-Emitter Saturation Voltage (Note 1) VBE(sat) IC=-150mA, IB=-15mA -1.3 V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product fT IC=-50mA, VCE=-20V, f=100MHz 250 MHz Output Capacitance COBO VCB=-10V, IE=0, f=100kHz 4.0 pF Input Capacitance CIBO VEB=-2.0V, IC=0, f=100kHz 12 pF Noise Figure NF IC=-100µA, VCE=-10V, RS=1.0kΩ, f=1.0kHz 2.0 dB SWITCHING CHARACTERISTICS Turn-on Time tON VCC=-30V, IC=-150mA, IB1=-15mA 30 ns Delay Time tD 8.0 ns Rise Time tR 20 ns Turn-off Time tOFF VCC=6.0V, IC=-150mA, IB1=IB2=-15mA 80 ns Storage Time tS 60 ns Fall Time tF 20 ns Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0% 2. All voltages (V) and currents (A) are negative polarity for PNP transistors. |
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