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MMDT2907AG-AL6-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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MMDT2907AG-AL6-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() MMDT2907A Preliminary DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R218-028.b ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) (Note 1, 2) PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage TR1 VCEO 30 V TR2 -30 V Collector-Base Voltage TR1 VCBO 60 V TR2 -60 V Emitter-Base Voltage TR1 VEBO 5.0 V TR2 -5.0 V Collector Current - Continuous TR1 IC 500 mA TR2 -500 mA Total Device Dissipation PD 300 mW Derate above 25°C 2.4 mW/°C Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired 3. All voltages (V) and currents (A) are negative polarity for PNP transistors. THERMAL DATA (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Thermal Resistance, Junction to Ambient θJA 415 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) (Note 2) TR1 PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) V(BR)CEO IC=10mA, IB=0 30 V Collector-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 60 V Emitter-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5.0 V Collector Cutoff Current ICBO VCB=50V, IE=0 30 nA Emitter Cutoff Current IEBO VEB=3.0V, IC=0 30 nA ON CHARACTERISTICS DC Current Gain hFE IC=1.0mA, VCE=10V 50 IC=10mA, VCE=10V 75 IC=150mA, VCE=10V (Note 1) 100 IC=300mA, VCE=10V (Note 1) 30 Collector-Emitter Saturation Voltage (Note 1) VCE(sat) IC=150mA, IB=15mA 0.4 V IC=300mA, IB=30mA 1.4 V Base-Emitter Saturation Voltage (Note 1) VBE(sat) IC=150mA, IB=15mA 1.3 V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product fT IC=50mA, VCE=20V, f=100MHz 250 MHz Output Capacitance COBO VCB=10V, IE=0, f=100kHz 4.0 pF Input Capacitance CIBO VEB=2.0V, IC=0, f=100kHz 12 pF Noise Figure NF IC=100µA, VCE=10V, RS=1.0kΩ, f=1.0kHz 2.0 dB |
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