2SB834G-X-AB3-R datasheet(4/5 Pages) UTC

4 / 5 page

2SB834

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R204-018.F



TYPICAL CHARACTERISTICS

Temperature, TC (°C)

100

Power Derating

125

150

-3.0

-2.0

Collector-Emitter Voltage, VCE (V)

-1.0

-3.0

-6.0

-4.0

-5.0

-2.0

-1.0

Collector Current vs.

Collector-Emitter Voltage

-20

-30

-40

-50

IB = -10mA

TC=25°C

TO-126/TO-220F

TO-220

300

Collector Current, IC (mA)

100

-100

-3k

-200

-1k

-20

-2

DC Current Gain

-5 -10

-50

-500

VCE = 5.0V

-3.0

Base-Emitter Voltage, VBE (V)

-2.0

-0.8

-1.6

-1.0

-0.4

-1.2

VCE = 5.0V

Collector Current vs.

Base-Emitter Voltage

TC=100°C

25°C

-25°C

-0.4

Collector Current, IC (mA)

-0.1

-0.2

-100

-3k

-200

-1k

-20

-2

-0.05

-0.02

Collector-Emitter Saturation Voltage

vs. Collector Current

-5 -10

-50

-500

-2k

-1.0

Common Emitter

IC/IB = 10

-5.0

Collector Emitter Voltage, VCE (V)

-1.0

-2.0

-1.0

-0.5

-0.1

Active-Region Safe Operating AREA

(SOA)

-10

100ms

-0.2

10ms

1ms

-10

-100

-5.0

-2.0

-7.0

-20

-70

-50

Bonding Wire Limit

Second Breakdown Limit

Thermally Limited

at TC=25°C(Single Pulse)

TC=100°C

25°C

-25°C

-60

-80

-70

TC=100°C

TC=25°C

TC=-25°C

SOT-89

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