2SB834G-X-AB3-R datasheet(3/5 Pages) UTC

3 / 5 page

2SB834

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R204-018.F



ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-60

Emitter-Base Voltage

VEBO

-7

Collector Current

-3

Base Current

-0.5

Power Dissipation (TC=25°C)

SOT-89

TO-220

TO-252

TO-126/TO-220F

Junction Temperature

+125

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage

BVCEO

IC=-50mA

-60

Collector Cut-Off Current

ICBO

VCB=-60V

-100

μA

Emitter Cut-Off Current

IEBO

VEB=-7V

-100

μA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-3A, IB=0.3A

-1

Base-Emitter On Voltage

VBE(ON)

VCE=-5V, IC=-0.5A

-0.7

-1

DC Current Gain

hFE1

IC=-0.5A, VCE=-5V

300

hFE2

IC=-3A, VCE=-5V

Current Gain Bandwidth Product

VCE=-5V, IC=-0.5A

MHZ



CLASSIFICATION of hFE1

RANK

RANGE

60-120

100-200

150-300

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