2N7002BKS datasheet(3/16 Pages) PHILIPS

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2N7002BKS

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Product data sheet

Rev. 2 — 23 September 2010

3 of 16

NXP Semiconductors

2N7002BKS

60 V, 300 mA dual N-channel Trench MOSFET

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3]

Measured between all pins.

IDM

peak drain current

Tamb =25 °C;

single pulse; tp ≤ 10 μs

-1.2

Ptot

total power dissipation

Tamb =25 °C

[2] -295

[1] -340

Tsp =25 °C

1040

Source-drain diode

source current

Tamb =25 °C

[1] -300

ESD maximum rating

VESD

electrostatic discharge

voltage

human body model

[3] -

2000

Per device

Ptot

total power dissipation

Tamb =25 °C

[2] -445

junction temperature

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Fig 1.

Normalized total power dissipation as a

function of ambient temperature

Fig 2.

Normalized continuous drain current as a

function of ambient temperature

Tamb (°C)

−75

175

125

−25

017aaa001

120

Pder

(%)

Tamb (°C)

−75

175

125

−25

017aaa002

120

Ider

(%)

der

tot

tot 25

°C

()

------------------------

100 %

der

D25

°C

()

--------------------

100 %

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