2N7002BKS datasheet(7/16 Pages) PHILIPS

7 / 16 page

2N7002BKS

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 23 September 2010

7 of 16

NXP Semiconductors

2N7002BKS

60 V, 300 mA dual N-channel Trench MOSFET

Tamb =25 °CTamb =25 °C; VDS =5V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical

values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Tamb =25 °C

(1) VGS =3.25 V

(2) VGS =3.5 V

(3) VGS =4 V

(4) VGS =5 V

(5) VGS =10 V

ID =500 mA

(1) Tamb = 150 °C

(2) Tamb =25 °C

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

0.0

4.0

3.0

1.0

2.0

017aaa039

0.4

0.5

0.3

0.2

0.1

0.6

0.7

(A)

0.0

3.5 V

VGS = 4.0 V

3.0 V

2.75 V

2.5 V

3.25 V

017aaa040

VGS (V)

0.0

3.0

2.0

1.0

10−4

10−5

10−3

(A)

10−6

(2)

(1)

(3)

ID (A)

0.0

1.0

0.8

0.4

0.6

0.2

017aaa041

2.0

4.0

6.0

RDSon

(

Ω)

0.0

(1)

(2)

(3)

(4)

(5)

VGS (V)

0.0

10.0

8.0

4.0

6.0

2.0

017aaa042

2.0

4.0

6.0

RDSon

(

Ω)

0.0

(1)

(2)

2N7002BKS bảng dữ liệu(PDF) 7 Page - NXP Semiconductors

2N7002BKS bảng dữ liệu(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

bảng dữ liệu tải về

Link URL