IRGS4630DPBF datasheet(2/15 Pages) IRF

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IRGS/B/P4630D/EPbF

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November 18, 2014

Thermal Resistance

Parameter

Min.

Typ.

Max. Units

RθJC (IGBT)

Thermal Resistance Junction-to-Case (D2Pak, TO-220) 

–––

0.73

°C/W

RθCS

Thermal Resistance, Case-to-Sink (flat, greased surface)

–––

0.5

–––

RθJA

Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak) 

–––

RθJC (Diode) Thermal Resistance Junction-to-Case (D

2Pak, TO-220) 

–––

2.0

Thermal Resistance Junction-to-Case (TO-247) 

–––

0.78

Thermal Resistance Junction-to-Case (TO-247) 

–––

2.1

Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)

–––

Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)

–––

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, IC = 100µA 

ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage

—

0.40

—

V/°C VGE = 0V, IC = 1mA (25°C-175°C)

VCE(on)

Collector-to-Emitter Saturation Voltage

—

1.65

1.95

IC = 18A, VGE = 15V, TJ = 25°C

—

2.05

—

IC = 18A, VGE = 15V, TJ = 150°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 500µA

ΔVGE(th)/ΔTJ

Threshold Voltage Temp. Coefficient

—

-18

—

mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)

gfe

Forward Transconductance

—

VCE = 50V, IC = 18A, PW = 80µs

ICES

Collector-to-Emitter Leakage Current

—

2.0

µA

VGE = 0V, VCE = 600V

—

550

—

VGE = 0V, VCE = 600V, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ±20V

VFM

Diode Forward Voltage Drop

—

2.3

3.3

IF = 18A

—

1.6

—

IF = 18A, TJ = 175°C

—

2.15

—

IC = 18A, VGE = 15V, TJ = 175°C

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max

Units

Conditions

Total Gate Charge

—

IC = 18A

Qge

Gate-to-Emitter Charge

—

VGE = 15V

Qgc

Gate-to-Collector Charge

—

VCC = 400V

Eon

Turn-On Switching Loss

—

µJ

IC = 18A, VCC = 400V, VGE=15V

RG = 22

Ω, L = 200µH, LS = 150nH,

TJ = 25°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

—

350

—

Etotal

Total Switching Loss

—

445

—

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

105

—

Fall time

—

Eon

Turn-On Switching Loss

—

285

—

µJ

IC = 18A, VCC = 400V, VGE=15V

RG = 22

Ω, L = 200µH, LS = 150nH,

TJ = 175°C

Energy losses include tail & diode

reverse recovery 

Eoff

Turn-Off Switching Loss

—

570

—

Etotal

Total Switching Loss

—

855

—

td(on)

Turn-On delay time

—

Rise time

—

td(off)

Turn-Off delay time

—

120

—

Fall time

—

Cies

Input Capacitance

—

1040

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1.0MHz

RBSOA

Reverse Bias Safe Operating Area

TJ = 175°C, IC = 72A

FULL SQUARE

VCC = 480V, Vp ≤ 600V

RG = 22Ω, VGE = +20V to 0V

SCSOA

Short Circuit Safe Operating Area

5.0

—

µs

VCC = 400V, Vp ≤ 600V

RG = 22Ω, VGE = +15V to 0V

Erec

Reverse Recovery Energy of the Diode

—

260

—

µJ

TJ = 175°C

trr

Diode Reverse Recovery Time

—

100

—

VCC = 400V, IF = 18A, VGE = 15V,

Irr

Peak Reverse Recovery Current

—

Rg = 22

Ω, L = 200µH, LS = 150nH

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