MSK1N3 datasheet(2/5 Pages) BWTECH

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MSK1N3

N-Channel Logic Level Enhancement Mode MOSFET

Publication Order Number: [MSK1N3]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Ta=25°C)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

±8

Drain Current -Continuous (TA =25°C)

Drain Current -Continuous (TA =70°C)

3.6

IDM

Pulsed Drain Current

Total Power Dissipation (TA=25°C)

Total Power Dissipation (TA=70°C)

0.83

0.3

Continuous Source Current (Diode Conduction)

TJ,TSTG

Operating and Storage Temperature Range

-55 to +150

°C

Thermal Data

Symbol

Parameter

Max.

Units

RθJA

Maximum Junction-to- Ambient

a ( t<=10 sec )

110

°C/W

RθJA

Maximum Junction-to- Ambient

a ( Steady State )

150

Note:

Surface Mounted on 1“x1” FR4 Board.

2. Pulse width limited by maximum junction temperature.

Electrical Characteristics

Static

Symbol

Test Conditions

Min

Typ.

Max.

Units

VSD

VGS = 0 V , IS = 1 A

0.7

VGS(th)

VDS = VGS , ID = 250μA

IDSS

VDS = 24 V , VGS = 0 V

VDS = 20 V , VGS = 0 V , Tj= 125°C

μA

IGSS

VGS = ±8 V , VDS = 0

±10

ID(ON)

VDS = 5 V , VGS = 4.5 V

RDS(ON)*1

VGS = 2.5 V,ID = 5 A

VGS = 4.5 V,ID = 6 A

GFS*1

VDS = 15 V,ID = 6 A

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS = 10 V, VGS = 0 V,

f = 1.0MHz

680

COSS

Output Capacitance

144

CRSS

Reverse Transfer Capacitance

137

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