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DMN6066SSD-13 bảng dữ liệu(PDF) 4 Page - Diodes Incorporated

tên linh kiện DMN6066SSD-13
Giải thích chi tiết về linh kiện  60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  9 Pages
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nhà sản xuất  DIODES [Diodes Incorporated]
Trang chủ  http://www.diodes.com
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DMN6066SSD-13 bảng dữ liệu(HTML) 4 Page - Diodes Incorporated

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DMN6066SSD
Document Number DS32109 Rev. 4 - 2
4 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSD
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
60
V
ID = 250µA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
0.5
µA
VDS= 60V, VGS= 0V
Gate-Source Leakage
IGSS
100
nA
VGS= 20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
1.0
3.0
V
ID= 250µA, VDS= VGS
Static Drain-Source On-Resistance (Note 14)
RDS (ON)
0.048
0.066
Ω
VGS= 10V, ID= 4.5A
0.068
0.097
VGS= 4.5V, ID= 3.5A
Forward Transconductance (Notes 14 & 15)
gfs
19.2
S
VDS= 15V, ID= 6A
Diode Forward Voltage (Note 14)
VSD
0.89
1.15
V
IS= 4.5A, VGS= 0V
Reverse recovery time (Note 15)
trr
22.2
ns
IS= 1.9A, di/dt= 100A/µs
Reverse recovery charge (Note 15)
Qrr
16.9
nC
DYNAMIC CHARACTERISTICS (Note 15)
Input Capacitance
Ciss
502
pF
VDS= 30V, VGS= 0V
f= 1MHz
Output Capacitance
Coss
45.7
pF
Reverse Transfer Capacitance
Crss
27.1
pF
Total Gate Charge (Note 16)
Qg

5.4

nC
VGS= 4.5V
VDS= 30V
ID= 4.5A
Total Gate Charge (Note 16)
Qg
10.3
nC
VGS= 10V
Gate-Source Charge (Note 16)
Qgs
1.7
nC
Gate-Drain Charge (Note 16)
Qgd
3.2
nC
Turn-On Delay Time (Note 16)
tD(on)
2.7
ns
VDD= 30V, VGS= 10V
ID= 1A, RG  6.0Ω
Turn-On Rise Time (Note 16)
tr
2.4
ns
Turn-Off Delay Time (Note 16)
tD(off)
14.7
ns
Turn-Off Fall Time (Note 16)
tf
5.4
ns
Notes:
14. Measured under pulsed conditions. Pulse width
 300µs; duty cycle  2%.
15. For design aid only, not subject to production testing.
16. Switching characteristics are independent of operating junction temperatures.



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