DMN6066SSD

Document Number DS32109 Rev. 4 - 2

2 of 9

www.diodes.com

April 2015

© Diodes Incorporated

DMN6066SSD

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

(Note 6)

20

V

Single Pulsed Avalanche Energy

(Note 13)

37.5

mJ

Single Pulsed Avalanche Current

(Note 13)

5.0

A

Continuous Drain Current

(Note 8)

4.4

A

3.5

(Note 7)

3.3

Pulsed Drain Current

(Note 9)

17.0

A

Continuous Source Current (Body diode)

(Note 8)

3.2

A

Pulsed Source Current (Body diode)

(Note 9)

17.0

A

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Notes 7 & 10)

1.25

10

W

mW/°C

(Notes 7 & 11)

1.8

14.3

(Notes 8 & 10)

2.14

17.2

Thermal Resistance, Junction to Ambient

(Notes 7 & 10)

100

°C/W

(Notes 7 & 11)

70

(Notes 8 & 10)

58

Thermal Resistance, Junction to Lead

(Notes 10 & 12)

55

Operating and Storage Temperature Range

-55 to 150

°C

Notes:

7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

8. Same as note (3), except the device is measured at t

 10 sec.

9. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

10. For a dual device with one active die.

11. For a device with two active die running at equal power.

12. Thermal resistance from junction to solder-point (at the end of the drain lead).