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AN4407 bảng dữ liệu(PDF) 11 Page - STMicroelectronics

tên linh kiện AN4407
Giải thích chi tiết về linh kiện  Advantage of the use of an added driver source lead in discrete Power MOSFETs
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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AN4407 bảng dữ liệu(HTML) 11 Page - STMicroelectronics

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11/19
AN4407
Description
19
In fact, the real voltage across the gate and source pin, equal to the difference between the
driving voltage and the parasitic overvoltage, becomes positive and fully equivalent to the
extra voltage generated.
This aspect is confirmed by the waveform comparisons between the tests with a standard 3-
pin solution and the 4-pin alternative. In Figure 14, this specific aspect is shown.
Figure 14. Turn-off comparison between 3 pin and 4 pin solution
The improvement in terms of reduction of power loss is also present when the value of
RGATE is changed, accelerating or delaying the switching operations.
Figure 15. Turn-off energy comparison @ different Rg values
1.2.2
Turn-on
Also for the turn-on situation, when the driver forces VGG=12 V and the MOSFET turns on,
the positive extra-voltage generated over the stray inductance introduces a turn-on delay,
reducing the effective value of VGS with consequently higher turn-on switching losses and
increased total switching power dissipation (Figure 16).
GIPG261120131627FSR
GIPG261120131635FSR



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