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AN4407 bảng dữ liệu(PDF) 11 Page - STMicroelectronics |
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AN4407 bảng dữ liệu(HTML) 11 Page - STMicroelectronics |
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11 / 19 page ![]() DocID025572 Rev 1 11/19 AN4407 Description 19 In fact, the real voltage across the gate and source pin, equal to the difference between the driving voltage and the parasitic overvoltage, becomes positive and fully equivalent to the extra voltage generated. This aspect is confirmed by the waveform comparisons between the tests with a standard 3- pin solution and the 4-pin alternative. In Figure 14, this specific aspect is shown. Figure 14. Turn-off comparison between 3 pin and 4 pin solution The improvement in terms of reduction of power loss is also present when the value of RGATE is changed, accelerating or delaying the switching operations. Figure 15. Turn-off energy comparison @ different Rg values 1.2.2 Turn-on Also for the turn-on situation, when the driver forces VGG=12 V and the MOSFET turns on, the positive extra-voltage generated over the stray inductance introduces a turn-on delay, reducing the effective value of VGS with consequently higher turn-on switching losses and increased total switching power dissipation (Figure 16). GIPG261120131627FSR GIPG261120131635FSR |
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