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AN4191 bảng dữ liệu(PDF) 17 Page - STMicroelectronics |
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AN4191 bảng dữ liệu(HTML) 17 Page - STMicroelectronics |
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17 / 20 page ![]() AN4191 Rg impact for MOSFETs in buck/buck-boost configurations Doc ID 023815 Rev 1 17/20 As shown in the previous images, the “bad” part shows an incorrect output voltage value (0.473 V vs. 1.18 V), due to the different MOSFET switching speed and switching times. The thermal measurements are made at the board startup and no load conditions, using a thermal camera to detect MOSFET and driver temperatures. Figure 25 and Figure 24 show, respectively, the images for “good” and “bad” parts. For the “good” sample, the MOSFET temperature is 35.4 °C, while for the “bad” device its 87.4 °C. A similar temperature increase is detected for the driver: 37.8 °C for the first configuration and 73.4 °C for the second one. It is obvious that such high Rg values cause: ● MOSFET temperatures to rise due to switching loss enlargements (the higher the Rg, the longer the MOSFET switching times) ● Driver temperature increases because of gate drive losses rising. Unfortunately, full load conditions haven't been reached due to the quick device temperature increase till maximum rating. Figure 23. “Good” part steady-state waveforms Figure 24. “Bad” part steady-state waveforms AM16429V1 AM16430V1 Figure 25. “Good” part thermal image Figure 26. “Bad” part thermal image AM16431V1 AM16432V1 |
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